https://li02.tci-thaijo.org/index.php/ssstj/issue/feed Suan Sunandha Science and Technology Journal 2025-03-13T14:57:30+07:00 Editorial Office, Journal of Science and Technology (SSSTJ) ssstj.contact@gmail.com Open Journal Systems <p>The Suan Sunandha Science and Technology Journal (SSSTJ) is a double-blind peer-reviewed scientific journal published twice a year (January and July) by the Faculty of Science and Technology, Suan Sunandha Rajabhat University. Submissions of manuscripts should be sent to the Editor of the SSSTJ by online system.The manuscript will be taken that all contributing authors attest that manuscripts and material submitted to the SSSTJ are original and have not been published or submitted elsewhere and the authors concede to the open-access distribution of the manuscript, including all content contained therein.</p> <div> <h3><strong>Open Access Journal – SSSTJ (An International Journal)</strong></h3> </div> <div> <p><strong>Editor-in-Chief:</strong> Assoc. Prof. Dr. Narong Sangwaranatee, Suan Sunandha Rajabhat University (Thailand).</p> <p><strong>Open Access:</strong> meaning all content is freely accessible (without fees) online to everyone, everywhere. Journal publishes under the Creative Commons Attribution License (CC BY).</p> <p>SSSTJ has both online and printing versions.<br />ISSN 2351-0889 (Print)<br />e-ISSN 2539-5742 (Online)<br /><br />SSSTJ is an international, cross-disciplinary, scholarly and open access journal of science and technology. The focus is to publish papers on state-of–the-art science and technology.</p> <p><strong>Fast Publications:</strong> The published research manuscripts are peer-reviewed and a first decision provided to authors within 30-60 days after submission.</p> </div> <div> <h3>General Information</h3> <p>The Suan Sunandha Science and Technology Journal (SSSTJ) is a double-blind peer-reviewed (at least two reviewers) scientific journal published twice a year (January and July) by the Faculty of Science and Technology, Suan Sunandha Rajabhat University. Submissions of manuscripts should be sent to the Editor of the SSSTJ by online system: http://www.ssstj.sci.ssru.ac.th. The manuscript will be taken that all contributing authors attest that manuscripts and material submitted to the SSSTJ are original and have not been published or submitted elsewhere and the authors concede to the open-access distribution of the manuscript, including all content contained therein.</p> </div> <div> <h3>Aim and Scope</h3> <p>Suan Sunandha Science and Technology Journal (SSSTJ) is an international academic journal that gains foothold at Suan Sunandha Rajabhat University, Thailand and opens to scientific communications in Southeast Asia, Asia and worldwide. It aims to contribute significant articles in science and technology researches. Published papers are focus on state of the art science and technology. Committee of the journal and association will review submitted papers. The authors may include researchers, managers, operators, students, teachers and developers.<br /><br />Following areas are considered for publication:</p> <div class="panel-heading"> <strong>Areas of Publications</strong></div> <div class="list-group"><a class="list-group-item"> Biology (BI)</a><a class="list-group-item"> Biotechnology (BT)</a><a class="list-group-item"> Environmental Science and Technology (EN)</a><a class="list-group-item"> Food Science and Technology (FT)</a><a class="list-group-item"> Microbiology (MI)</a><a class="list-group-item"> Applied Science (AS)</a><a class="list-group-item"> Computer Science and Information Technology (CS)</a><a class="list-group-item"> Other related fields (OF)</a></div> <h3>Publication Frequency</h3> </div> <div> <p>Two issues per year as follows:<br />1<sup>st</sup> issue: January<br />2<sup>nd</sup> issue: July</p> </div> <div> <h3>Access and Publication Fees</h3> <p>The Suan Sunandha Rajabhat University Journal of Science and Technology (SSSTJ) are published by the Department of Science and Technology of Suan Sunandha Rajabhat University, Bangkok (Thailand) on a non-profit basis, offering the following:</p> <ul> <li>All articles published open access (free of charge) will be immediately and permanently free for everyone to read, download, copy and distribute</li> <li>No university library or individual reader have to pay a subscription fee or buy access to access the articles published in the journal</li> <li>Authors do not need to pay any article submission or processing charges</li> </ul> <h3>Reprints</h3> </div> <div> <p>Please contact <a href="mailto:ssstj.contact@gmail.com">ssstj.contact@gmail.com</a> for more information on how to get the reprints of journal.</p> </div> https://li02.tci-thaijo.org/index.php/ssstj/article/view/795 Evaluating a Small-scale Membrane Technology for Removing Salinity in Village Water Supply at Dan Kuntot, Nakhon Ratchasima 2024-03-26T10:08:57+07:00 Saranbhak Chuersuwan saranbhak@gmail.com Hathairath Techapanyarak saranbhak@gmail.com Nirat Phutadmark saranbhak@gmail.com <p>This study evaluates the use of a solar-powered membrane separation device to remove salinity from a village water supply in Dan Kuntot District. Water quality from surface water, freshwater, and tap water were tested for pH, temperature, turbidity, salinity, conductivity, and total dissolved solids (TDS). The results showed that surface water had high levels of salinity (1.6-2.1 ppt), conductivity (3495-3982 µS/cm, and TDS (2097-2351 mg/L). The surface water had a pH in the range of 5.7 to 6.2, temperatures of 27.6 to 29.3 Celsius, and turbidity of 6.8 to 10.1 NTU. The freshwater from the village water supply had a comparable pH (5.5-6.9).&nbsp; Turbidity levels were low (0.25-0.27 NTU). Conductivity and TDS levels were a bit lower to 3342-3415 µS/cm and 2005-2049 mg/L, respectively. Salinity levels remained high, 1.6 ppt. The village water treatment process cannot remove salt molecules. The tap water had an undetected salinity level after the freshwater passed through the membrane device. Conductivity and TDS were much lower, ranging from 14 to 19 µS/cm and 9 to 12 mg/L, respectively. The solar-powered small membrane separation could remove salinity as high as 2.1 ppt down to undetected level. The device could separate salt molecules using membrane technology, significantly reducing salinity levels in the tap water. Conductivity and TDS levels were also considerably lower in the tap water, with more than a 99 percent reduction. However, the produced water had low pH levels. Adding alkalinity would bring the pH close to neutral.</p> 2025-03-13T00:00:00+07:00 Copyright (c) 2025 Suan Sunandha Rajabhat University https://li02.tci-thaijo.org/index.php/ssstj/article/view/874 Oxidation Behavior of Nanostructure CrAlN Thin Films 2025-02-03T16:44:45+07:00 Nirun Witit-anun nirun@buu.ac.th Adisorn Buranawong adisornb@buu.ac.th <p>In this research, the nanostructure chromium aluminium nitride (CrAlN) thin films were prepared on silicon (100) substrate by reactive DC magnetron sputtering technique with Cr-Al alloy target and then annealing in air at different temperatures (500 - 900 °C) to investigate the oxidation behavior. The films' oxidation rate and oxidation activation energy were also calculated using parabolic relations and the Arrhenius equation. The X-ray diffraction (XRD) indicated that a solid solution CrAlN structure was found for the as-deposited thin film whereas the mixed oxide phase of Cr<sub>2</sub>O<sub>3</sub> and Cr<sub>5</sub>O<sub>12</sub> structures were discovered in the XRD spectra upon oxidation temperature at 800 °C. The XRD patterns were verified by the Energy dispersive X-ray spectroscopy (EDS) examination, which demonstrated the obvious increase of oxygen concentration at oxidation temperature from 800 °C due to the oxidation mechanism. The oxidation behavior was also confirmed by field-emission scanning electron microscopy (FE-SEM) analysis which the grain aggregation was observed while the cross-sectional microstructure of the thin films revealed that a very thin dense oxide layer was formed on the CrAlN layer. The oxide thickness increased from 648 nm to 1044 nm with increasing annealing temperature. The thin films began oxidizing above 800 °C, resulting in a porous structure. It was discovered that the as-deposited thin film exhibited a high-temperature oxidation resistance at 800 °C. The oxidation rate increased from 1.43 × 10<sup>-13</sup> to 3.78 × 10<sup>-13</sup> cm/s<sup>2</sup> and was obtained from an annealing temperature of 800 °C. The oxidation activation energy calculated from the Arrhenius plot was 99.85 kJ/mol. The nanoindentation technique also reported that the hardness of the films decreased from 15.92 to 0.03 GPa through the annealing temperature.</p> 2025-03-13T00:00:00+07:00 Copyright (c) 2025 Suan Sunandha Rajabhat University