XANES, XPS and Raman Studies of Hafnium Oxide Thin Films fabricated by RF Magnetron Sputtering at Different Power
DOI:
https://doi.org/10.53848/ssstj.v10i2.571Keywords:
Hafnium oxide thin films, Raman spectroscopy, XANES, XPSAbstract
Hafnium oxide layer was deposited on unheated silicon wafer and glass substrates at different power by using RF magnetron sputtering technique. The structural property was investigated by Raman spectroscopy. Moreover, HfO2 structure in monoclinic major phase especially at high RF power was found from the Raman spectra in vibrational modes. In addition, oxidations state of hafnium oxide thin films was gained by synchrotron-based X-ray absorption spectroscopy (XAS) using Hf L3-edge of XANES techniques and X-ray photoelectron spectroscopy (XPS) as well. The XANES and XPS results show that the oxidation state of HfO2 films is unchanged at different powers. The thin film prepared at higher power tends to have lower of oxygen vacancy.
References
Ali, F., Zhou, D., Ali, M., Ali, H. W., Daaim, M.,Khan, S., … Sun, N. (2020). Recent progress on energy-related applications of HfO2-based ferroelectric and antiferroelectric materials.ACS Applied Electronic Materials, 2(8), 2301-2317. doi:10.1021/acsaelm.0c00304
Aygun, G., & Yildiz, I. (2009). Interfacial and structural properties of sputtered HfO2 layers.Journal of Applied Physics, 106(1), 014312. doi:10.1063/1.3153953
Biswas, D., Sinha, A. K., & Chakraborty, S. (2016).Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray diffraction. Applied Surface Science, 384,376-379. doi:10.1016/j.apsusc.2016.05.015
Böscke, T. S., Müller, J., Bräuhaus, D., Schröder,U., & Böttger, U. (2011). Ferroelectricity in hafnium oxide thin films. Applied Physics Letters, 99(10), 102903.doi:10.1063/1.3634052
Botti, L., Kondrat, S. A., Navar, R., Padovan, D.,Martinez‐Espin, J. S., Meier, S., & Hammond,C. (2020). Solvent‐activated hafnium‐ containing zeolites enable selective and continuous glucose–fructose isomerisation.Angewandte Chemie, 132(45), 20192-20198. doi:10.1002/ange.202006718
Cantas, A., Aygun, G., & Basa, D. K. (2014). In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering. Journal of Applied Physics, 116(8), 083517.doi:10.1063/1.4893708
Cho, D. Y., Jung, H. S., & Hwang, C. S. (2010).Structural properties and electronic structure of HfO2-ZrO2 composite films. Physical Review B, 82(9). doi:10.1103/physrevb.82.094104
Gangqiang, Z., Sanqi, T., & Tingting, T. (2013).Electronic structure and optical properties of monoclinic HfO2 with oxygen vacancy. Rare Metal Materials and Engineering, 42(8), 1576-1580. doi:10.1016/s1875-5372(13)60093-4
Gao, J., He, G., Deng, B., Xiao, D. Q., Liu, M., Jin,P., … Sun, Z. Q. (2016). Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure. Journal of Alloys and Compounds,662, 339-347.doi:10.1016/j.jallcom.2015.12.080
Kukli, K., Ritala, M., Sundqvist, J., Aarik, J., Lu, J.,Sajavaara, T., … Hårsta, A. (2002). Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen. Journal of Applied Physics, 92(10),5698-5703. doi:10.1063/1.1515107
Lin, S. S., & Liao, C. S. (2013). The hydrophobicity and optical properties of the HfO2-deposited glass. Ceramics International, 39(1), 353 -358.doi:10.1016/j.ceramint.2012.06.033
Luo, J. D., Zhang, H. X., Wang, Z. Y., Gu, S. S.,Yeh, Y. T., Chung, H. T, … Cheng, H. C. (2019). Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition.Japanese Journal of Applied Physics, 58. doi:10.7567/1347 -4065/ab0ded
Luo, X., Li, Y., Yang, H., Liang, Y., He, K., Sun,W., … Feng, Z. (2018). Investigation of HfO2 thin films on Si by X-ray photoelectron spectroscopy, Rutherford backscattering, grazing incidence X-ray diffraction and variable angle spectroscopic ellipsometry.Crystals, 8(6), 248. doi:10.3390/cryst8060248
Park, P. K., & Kang, S. W. (2006). Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3. Applied Physics Letters, 89(19), 192905. doi:10.1063/1.2387126
Pathak, S., Das, P., Das, T., Mandal, G., Joseph, B.,Sahu, M., … Siruguri, V. (2020). Crystal structure of monoclinic hafnia (HfO2) revisited with synchrotron X-ray, neutron diffraction and first-principles calculations. Acta Crystallographica Section C: Structural Chemistry, 76(11), 1034-1042.doi:10.1107/s2053229620013960
Perevalov, T. V., Aliev, V. Sh., Gritsenko, V. A.,Saraev, A. A., & Kaichev, V. V. (2013).Electronic structure of oxygen vacancies in hafnium oxide. Microelectronic Engineering,109, 21-23. doi:10.1016/j.mee.2013.03.005
Wu, R., Zhou, B., Li, Q., Jiang, Z., Wang, W., Ma,W., & Zhang, X. (2012). Elastic and vibrational properties of monoclinic HfO2 from first-principles study. Journal of Physics D: Applied Physics, 45(12), 125304.doi:10.1088/0022-3727/45/12/125304
Xiong, K., Robertson, J., Gibson, M. C., & Clark, S.J. (2005). Defect energy levels in HfO2 high-dielectric-constant gate oxide. Applied Physics Letters, 87(18), 183505.doi:10.1063/1.2119425
Zhou, B., Shi, H., Zhang, X. D., Su, Q., & Jiang, Z.Y. (2014). The simulated vibrational spectra of HfO2 polymorphs. Journal of Physics D: Applied Physics, 47(11), 115502.doi:10.1088/0022-3727/47/11/115502
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