Utilization of Zinc-doped Nickel Oxide Hole Transporting Materials to Improve Efficiency and Stability of Perovskite Solar Cells
DOI:
https://doi.org/10.53848/ssstj.v9i2.236Keywords:
Perovskite solar cells, Doping, NiOx, Zn, Hole transporting layersAbstract
Currently, several techniques have been employed in order to obtain a better quality of perovskite solar cells (PSCs). In this research, we focus on the development of the hole transporting material (HTM) for the efficiency as well as the stability enhancement of the PSCs. Here, a hole transporting layer (HTL) was fabricated using zincdoped nickel oxide (Zn-doped NiOx) nanoparticles and the HTL was incorporated into the cesium-formamidinium (CsFA) based PSCs to improve the electrical properties. As a result, PSCs with 1% Zn-doped NiOx demonstrated the highest power conversion efficiency (PCE) up to 14.72% with an open-circuit voltage (VOC), a short-circuit current density (JSC) and a fill factor of 1.02 V, 19.59 mA/cm2 and 0.734, respectively. Moreover, the PSCs with Zn-doped NiOx showed an enhancement in shelf-stability under aging conditions. The physical properties of the Zn-doped NiOx were analyzed using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The morphological characteristics of the HTL surface were examined by scanning electron microscopy (SEM) and the photovoltaic properties were analyzed in more detail.
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