Synthesis and Characterization of TiN Thin Films by DC Reactive Magnetron Sputtering


  • Siriwat Alaksanasuwan Faculty of Science and Technology, Phranakhon Si Ayutthaya Rajabhat University, Phranakhon Si Ayutthaya, Thailand
  • Nirun Witit-anun Department of Physics, Faculty of Science, Burapha University, Chonburi, Thailand



TiN thin film, N2 flow rates, Reactive magnetron sputtering


In this work, the titanium nitride (TiN) thin films were prepared on Si-wafers by using the DC reactive magnetron sputtering from a pure titanium target. The influence of N2 flow rates, in the range of 1.0-4.0 sccm, on the as-deposited TiN film’s structure was characterized by several techniques. (i) The crystal structures were studied by GI-XRD. (ii) The film’s thicknesses, microstructures, and surface morphologies were analyzed by FE-SEM. (iii) The elemental composition of films was measured by EDS. (iv) The hardness was measured by the nano-indentation. (v) The color was identified by a UV-VIS spectrophotometer. The results showed that the as-
deposited films were polycrystalline of B1-NaCl structure. The lattice constants were ranging from 4.211-4.239 Å. The as-deposited films showed a nano crystal size in the range of 17.8-24.6 nm. The thickness decreases from 1254 nm to 790 nm with following in the N2 flow rates. The concentration of Ti and N depended on the N2 flow rates. The cross-sectional analysis showed that the films had a compact-columnar structure. The hardness increased from 4 to 19 GPa with increasing in the N2 flow rates. The close to the color of 24K gold thin films in the CIE L*a*b* system was obtained by deposition in optimal N2 flow rates.


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How to Cite

Alaksanasuwan, S., & Witit-anun, N. . (2023). Synthesis and Characterization of TiN Thin Films by DC Reactive Magnetron Sputtering. Suan Sunandha Science and Technology Journal, 10(2), 205–212.



Research Articles